Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
* Notes :
1.5
1.0
0.9
1. V GS = 0 V
2. I D = 250 μ A
0.5
* Notes :
1. V GS = 10 V
2. I D = 20 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
o
Figure 9. Maximum Safe Operating Area
o
Figure 10. Maximum Drain Current
vs. Case Temperature
25
Operation in This Area
10
2
is Limited by R DS(on)
100 us
20
10
1
1 ms
10 ms
15
10
DC
0
10
* Notes :
10
1. T C = 25 C
2. T J = 150 C
-1
o
o
3. Single Pulse
5
10
10
10
10
10
-2
0
1
2
3
0
25
50
75
100
125
150
T C , Case Temperature [ C]
V DS , Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
o
10
0
D = 0 .5
1 . Z θ JC (t) = 0 .6 C /W M a x.
10
-1
0 .2
0 .1
* N o te s :
o
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .0 5
0 .0 2
P DM
0 .0 1
t 1
t 2
10
-2
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A 4
4
www.fairchildsemi.com
相关PDF资料
P51-50-A-F-D-5V-000-000 SENSOR 50PSI 1/4-18 NPT 1-5V
P51-15-A-F-D-5V-000-000 SENSOR 15PSI 1/4-18 NPT 1-5V
P51-750-A-E-D-5V-000-000 SENSOR 750PSI 3/8-24 UNF 1-5V
P51-500-A-E-D-5V-000-000 SENSOR 500PSI 3/8-24 UNF 1-5V
P51-300-A-E-D-5V-000-000 SENSOR 300PSI 3/8-24 UNF 1-5V
P51-200-A-E-D-5V-000-000 SENSOR 200PSI 3/8-24 UNF 1-5V
P51-100-A-E-D-5V-000-000 SENSOR 100PSI 3/8-24 UNF 1-5V
ASEMPC-25.000MHZ-Z-T OSC 25.000 MHZ CMOS MEMS SMD
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